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Microelectronic Research Facility
For detailed information on the Microelectronic Research Facility please see their website:
http://www.mrc.utexas.edu/facility.html
Here is a list of their fabrication and characterization equipment:
- Oxidation/diffusion furnaces (4-stack, 6" capability)
- LPCVD for poly, oxides, & nitrides (4-stack, 6")
- Oxidation/diffusion furnaces for high-K dielectrics, SiGe (6-stack, 4" capability)
- LPCVD for poly, oxides, & nitrides for high-K dielectrics, SiGe (3-stack, 4")
- RTP systems for RTA, RTO/RTN, RTPCVD of high-K dielectrics
- Karl Suss split field contact lithography (~0.5 micron)
- JEOL 6000 electron beam lithography
- Aluminum and silicide sputter deposition
- Reactive-ion etching of poly, oxides/nitrides
- Wet chemistry stations for cleans, etches for Si, SiGe, high-K dielectrics, metals
- SiGeC-heteroepitaxy: UHVCVD, RPCVD, RTPCVD
- Photolithography (Karl Süss MJB-3UV deep-UV optical lithography system)
- Sputter deposition metallization
- E-beam (CHA turbo-pumped four-hearth e-beam metal evaporator)
- Thermal evaporation of metals and dielectrics
- Reactive ion etching (Plasma-Therm)
- Rapid-thermal heating systems (AG Associates)
- Tencor Alpha-Step profilometer
- Numerous furnace tubes
- Laminar flow wet processing hoods
- Wafer thinning and polishing equipment
- Quantum efficiency, bandwidth to >50GHz, multiplication noise
- High-speed (50 GHz) ocsilloscopes and spectrum analyzers (50 GHz)
- I-V and C-V measurement systems (HP 4145B Semiconductor Parameter Analyzer and capacitance bridge)
- High-frequency network analyzer ( HP 8510B)
- Noise Figure Meter (HP 8970B)
- Digitizing Signal Analyze (Tektronix 11801)
- Various probe stations
- Pulsed and CW semiconductor laser driver current sources
- Spectrometers
- Coherent mode-locked Ti-sapphire laser with Regenerative Amplifier and Optical Parametric
- Oscillator (200 fs pulses from 500 nm to 2200 nm)
- Variable-temperature, light-vs-current measurement systems
- Varian Gen II molecular beam epitaxial systems: Arsenides, Phosphides, and Nitrides; also MOCVD
- Electrical I-V and C-V measurements
- Temperature-dependent Hall effect, DLTS
- Magneto-transport measurements (9T, 4-500K)
- XRD, FTIR, temperature-dependent PL
- AFM, SEM, lattice imaging TEM
- Rf and microwave characterization
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